Sub-continuum Thermal Simulations of Deep Sub-Micron Devices under ESD Conditions
نویسندگان
چکیده
The decreasing dimensions of IC devices is rendering the heat diffusion equation highly inaccurate for simulations of electrostatic discharge (ESD) phenomena. As dimensions of the heated region in the device are reduced far below 200 nm, neglecting the ballistic, sub-continuum nature of phonon conduction in the silicon lattice can strongly underpredict the temperature rise. This work integrates the phonon Boltzmann Transport Equation (BTE) in deep sub-micron silicon devices and presents a general methodology for solving the BTE. The approach developed is applicable to both Si and SO1 devices and predicts temperature rises consistent with failure voltage measurements for practical devices.
منابع مشابه
TECHCON 2000 Advanced Electro-Thermal Modeling and Simulation Techniques for Deep Sub-Micron Devices
The decreasing dimensions of IC devices is rendering the conventional heat diffusion equation highly inaccurate for electrothermal simulations of deep submicron devices. This work integrates the phonon Boltzmann Transport Equation (BTE) in deep sub-micron silicon devices and presents a general methodology for solving the BTE. The approach developed is applicable to both Si bulk and SOI devices ...
متن کاملProcess and Layout Dependent Substrate Resistance Modeling for Deep Sub-Micron ESD Protection Devices
This paper demonstrates a new methodology for bringing accurate substrate resistance modeling into circuit level ESD simulation. The impact of layout and process variations on the effective substrate resistance of deep sub-micron ESD devices is analyzed and modeled using a quasi mixed-mode approach. The substrate resistance simulated by this method shows good agreement with the values extracted...
متن کاملGlobal (interconnect) warming - IEEE Circuits and Devices Magazine
his article presents a comprehensive analysis of the thermal effects in advanced high-performance interconnect systems arising due to self-heating under various circuit conditions, including electrostatic discharge (ESD). Technology (Cu, low-k, etc.) and scaling effects on the thermal characteristics of the interconnects, and on their electromigration (EM) reliability, have been analyzed simult...
متن کاملSCR Device With Double-Triggered Technique for On-Chip ESD Protection in Sub-Quarter-Micron Silicided CMOS Processes
Turn-on efficiency is the main concern for silicon-controlled rectifier (SCR) devices used as on-chip electrostatic discharge (ESD) protection circuit, especially in deep sub-quarter-micron CMOS processes with much thinner gate oxide. A novel double-triggered technique is proposed to speed up the turn-on speed of SCR devices for using in on-chip ESD protection circuit to effectively protect the...
متن کاملActive Electrostatic Discharge (ESD) Device for On-Chip ESD Protection in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductor (CMOS) Process
A novel electrostatic discharge (ESD) protection device with a threshold voltage of 0V for complementary metal-oxide semiconductor (CMOS) integrated circuits in sub-quarter-micron CMOS technology is proposed. Quite different to the traditional ESD protection devices, such an active ESD device is originally standing in its turn-on state when the IC is zapped under ESD events. Therefore, such an ...
متن کامل